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Anomalous Composition Dependence of Optical Energies of MBE-grown InGaN

Published online by Cambridge University Press:  01 February 2011

I. Fernandez-Torrente ,
D. Amabile ,
R. W. Martin ,
K. P. O'Donnell ,
J.F.W. Mosselmans ,
E. Calleja  and
F. B. Naranjo
I. Fernandez-Torrente
Affiliation:
University of Strathclyde, Department of Physics, Glasgow, G4 0NG, Scotland, UK.
D. Amabile
Affiliation:
University of Strathclyde, Department of Physics, Glasgow, G4 0NG, Scotland, UK.
R. W. Martin
Affiliation:
University of Strathclyde, Department of Physics, Glasgow, G4 0NG, Scotland, UK.
K. P. O'Donnell*
Affiliation:
University of Strathclyde, Department of Physics, Glasgow, G4 0NG, Scotland, UK.
J.F.W. Mosselmans
Affiliation:
CLRC Daresbury Laboratories, Synchroton Radiation Department, Warrington WA4 4AD, England, UK
E. Calleja
Affiliation:
ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain.
F. B. Naranjo
Affiliation:
ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain.
*
+ mailto: k.p.odonnell@strath.ac.uk
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Abstract

A direct comparison of the optical energies of MBE- and MOVPE-grown InxGa1-xN epilayers of similar InN content is performed for the first time. The InN fraction in the 7 MBE samples examined ranged from x ∼ 0.11 to x ∼ 0.35 while the range in available MOVPE epilayers is [0, 0.4]. Wavelength Dispersive X-ray (WDX) and Extended X-ray Absorption Fine Structure (EXAFS) spectroscopies were used to measure composition and local structure (alloy character) of the samples. Cathodoluminescence (CL) spectroscopy in situ, ex situ photoluminescence (PL) mapping and large-area optical absorption spectroscopy were used to measure various optical energies. The composition dependence of the optical energies is determined by the growth method. The absorption bandgap and luminescence peak energies vary linearly with x for both growth methods, suggesting a near-zero value of the bowing parameter. But the energy intercept at zero InN content in MOVPE samples is close to the wurtzite-GaN bandgap of 3.4 eV at room temperature, as expected, while the equivalent for MBE samples falls near 3.2 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.47
Copyright
Copyright © Materials Research Society 2004

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Footnotes

*

Institut Català de Nanotecnoloǵa-ICMAB, Campus de la UAB, E-08193 Bellaterra, Spain.

References

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