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Anodic Bond Quality and impact on Pressure Sensor Long-Term Stability

Published online by Cambridge University Press:  21 March 2011

Henry Allen
Affiliation:
Silicon Microstructure Incorporated, 46583 Fremont Blvd. Fremont, CA 94538
Kamrul Ramzan
Affiliation:
Silicon Microstructure Incorporated, 46583 Fremont Blvd. Fremont, CA 94538
Jim Knutti
Affiliation:
Silicon Microstructure Incorporated, 46583 Fremont Blvd. Fremont, CA 94538
Carl Ross
Affiliation:
Motorola AIEG, 4000 Commercial Ave., Northbrook, Il 60062
Tim Milliman
Affiliation:
Motorola AIEG, 611 Jamison Road, Elma, NY 14059
Jeff Frye
Affiliation:
Motorola AIEG, 4000 Commercial Ave., Northbrook, Il 60062
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Abstract

Silicon pressure sensors have historically been fabricating by bonding a glass wafer to a micro-machined silicon wafer. The sensor may be sealed as an absolute pressure sensor by using planar glass and can then be used for detection of barometric pressure changes.

It has generally been assumed that as long as the glass and silicon are reasonable clean, then the silicon-glass seal is good and the part becomes a reliable, stable sensor. This paper addresses a low-level drift that was identified in such an absolute pressure sensor. A Zero drift in the range of 0.1% FS was detectable under humidity stresses. The stress always caused drift in the same direction, indicating an effective increased pressure in the sealed cavity.

The impact of various cleaning processes in reducing drift are reported. The improved process assure reliable product for applications such as automotive and altimeter applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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