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Annealing Studies of Er-Implanted GaAs and the Excitation Mechanism of Er in GaAs

Published online by Cambridge University Press:  21 February 2011

D. W. Elsaesser ,
J. E. Colon ,
Y. K. Yeo ,
R. L. Hengehold  and
G. S. Pomrenke
D. W. Elsaesser
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, Oh 45433
J. E. Colon
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, Oh 45433
Y. K. Yeo
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, Oh 45433
R. L. Hengehold
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, Oh 45433
G. S. Pomrenke
Affiliation:
Air Force Office of Scientific Research, Boiling AFB, DC 20332
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Abstract

Electrical and optical measurements were performed on p-type GaAs implanted with 1013 Er ions/cm2 at an energy of 1 MeV. The samples were annealed at 650, 750, 850, or 900 °C for 15 seconds using the rapid thermal annealing technique. Although annealing at 650 °C was insufficient to recover measureable electrical conductivity in the implanted region, Er3+ 4f-4f emissions were still observed. Annealing at 750 TC produced a large concentration of hole traps at EV + 360 meV, and the most intense Er-related emissions at 1.54 μm. The two higher annealing temperatures returned the implanted region to the conductivity of the substrate but resulted in weak Er-related emissions. Two distinct Er-related centers were found, and they are believed to be the cause of the intense and weak emissions, an Er-interstitial and Er substituting for Ga, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 251
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Takahei, K. and Taguchi, A. in Defects in Semiconductors 16, edited by Davies, G., Deleo, G., and Stavola, M. (Trans Tech Publications Ltd, Zürich, 1992), pp. 641–652; P. Klein, G. Moore, and H. Dietrich, ibid., pp. 665-670; J. Colon, D. Elsaesser, Y. Yeo, R. Hengehold, and G. Pomrenke, ibid, pp. 671-676Google Scholar
2. Whitney, P., Uwai, K., Nakagome, H., and Takahei, K., Appl. Phys. Lett. 53, 2074 (1988)Google Scholar
3. Taguchi, A., Nakagome, H., and Takahei, K., J. Appl. Phys. 68, 3390 (1990)Google Scholar
4. Evans, K., Taylor, E., Stutz, C., Elsaesser, D., Colon, J., Yeo, Y., Hengehold, R., and Solomon, J., J. Vac. Sci. B 10, 870 (1992)Google Scholar
5. Elsaesser, D., Colon, J., Yeo, Y., Hengehold, R., Evans, K. and Solomon, J., Proceedings of MBE-VII, to be published in J. Crystal GrowthGoogle Scholar
6. Yu, P., Mitchel, W., Mier, M., Li, S., and Lang, W., Appl. Phys. Lett. 6, 532 (1982)Google Scholar
7. Pomrenke, G., Ennen, H., and Haydl, W., J. Appl. Phys. 59, 601 (1986)Google Scholar
8. Kozanecki, A., Chan, M., Jeynes, C., Sealy, B., and Homewood, K., Solid-State Communications 78, 763 (1991)Google Scholar