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Annealing Properties of Defects in Bf2+ Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

T. Kitano ,
M. Watanabe ,
A. Yaoita ,
S. Oguro ,
A. Uedono ,
T. Moriya ,
S. Tanigawa ,
T. Kawano ,
R. Suzuki  and
T. Ohdaira
...Show all authors
T. Kitano
Affiliation:
ULSI Device Development Labs. NEC Corp., Sagamihara, Kawagawa 229–11, Japan
M. Watanabe
Affiliation:
ULSI Device Development Labs. NEC Corp., Sagamihara, Kawagawa 229–11, Japan
A. Yaoita
Affiliation:
ULSI Device Development Labs. NEC Corp., Sagamihara, Kawagawa 229–11, Japan
S. Oguro
Affiliation:
ULSI Device Development Labs. NEC Corp., Sagamihara, Kawagawa 229–11, Japan
A. Uedono
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
T. Moriya
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
S. Tanigawa
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
T. Kawano
Affiliation:
Radioisotope Center, University of Tsukuba, Tsukuba, lbaraki 305, Japan
R. Suzuki
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, lbaraki 305, Japan
T. Ohdaira
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, lbaraki 305, Japan
T. Mikado
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, lbaraki 305, Japan
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Abstract

The annealing properties of defects in BF2+ implanted silicon were investigated using positron annihilation, TEM and SIMS techniques. For the as-implanted specimens, the major species of defects was identified to be divacancies. After thermal annealing, vacancy-fluorine complexes were formed. The size of open volume in the vacancy-fluorine complexes became larger with increasing annealing temperature. Even after 1100 °C, the vacancy-fluorine complexes were still stable with the size of open volume close to V5. The depth profile of vacancy-fluorine complexes was not largely changed after re-crystallization. In this way, the fluorine atoms played an important role in forming the defects with a large size of open volume. After 1100°C annealing, the fluorine atoms piled up at two regions; the projected range of fluorine and the original amorphous/crystalline interface, where bubbles were observed by TEM. The vacancy-fluorine complexes detected by positron annihilation might be precursors of the bubbles observed by TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 143
Copyright
Copyright © Materials Research Society 1997

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