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Anneal Induced Changes in Amorphous Semiconductor Multilayers

Published online by Cambridge University Press:  26 February 2011

J. Gonzalez-Hernandez ,
D. D. Allred  and
O. V. Nguyen
J. Gonzalez-Hernandez
Affiliation:
CINVESTAV-IPN, Depto. de Fisica, Ap. Postal 14–740, Mexico, D.F.
D. D. Allred
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
O. V. Nguyen
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

We have prepared, heat treated and characterized various amorphous semiconductor periodic multilayers and ultrathin films. These were prepared by several vapor deposition techniques at substrate temperatures ranging from 25°C to 300°C and possessed periodicities from 22 to 400Å. Films were subjected to isochronal thermal treatments at progressively higher temperatures. Two effects were observed: enhanced diffusion and retarded crystallization. Interdiffusion, at rates which are many orders of magnitude higher than those anticipated from crystalline data, was observed in a-Si/a-Ge multilayers. Crystallization of germanium, the more readily crystallized member of the couple, is retarded; the extent depends on the thickness of the layer. The thinner the layer, the greater the retardation. Where intermixing is thermodynamically unfavorable as in a-Si/a-SiNx or a-Ge/a-SiNx multilayers, and ultrathin germanium layers on SiO2, interdiffusion does not occur, however, crystallization of silicon or germanium is again substantially retarded.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 569
Copyright
Copyright © Materials Research Society 1987

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References

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