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Analytical Treatment of Field-Effect Conduction in Polysilicon thin film Transistors

Published online by Cambridge University Press:  10 February 2011

W. Eccleston
W. Eccleston*
Affiliation:
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L693BX, England, UK., beccle@liverpool.ac.uk
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Abstract

The drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 149
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES.

1. Brotherton, S. D., Semiconductor Science & Technology, 10, 721–728, (1995).Google Scholar
2. Fortunato, G., Meakin, D. B. and Migliorato, P., Japanese Journal of Applied Physics, 27, 11, 2124–2127, (1988).Google Scholar
3. Seto, J. Y. W., Journal of Applied Physics, 46, 12, 5247–5254, (1975).Google Scholar
4. Kong, Hyak-Shik and Lee, Choochon, J. Appl. Phys., 78, 10, 6122–6131, (1995).Google Scholar
5. Shur, M. and Hack, M., J. Appl. Phys., 55, 10, 3831–3842, 1994.Google Scholar