Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-24T01:42:08.455Z Has data issue: false hasContentIssue false
  • English
  • Français

Analytical approach for transient photoconductivity in undoped a-Si:H

Published online by Cambridge University Press:  15 February 2011

M. Goerlitzer ,
P. Pipoz ,
H. Beck ,
N. Wyrsch  and
A. V. Shah
M. Goerlitzer
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland.
P. Pipoz
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland.
H. Beck
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland.
N. Wyrsch
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland.
A. V. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland.
Get access

Abstract

Transient photoconductive response of undoped a-Si:H has been studied; the changes were analysed between two slightly different steady-state illumination conditions, at room temperature. A theoretical model is developed to describe transient photoconductivity; it yields good agreement with the measured curves for a whole range of light intensities. Numerical evaluations allows one to extract the recombination time of electrons. Comparison with steady-state photoconductivity yields a band mobility of free electrons between 0.1 and 6 cm2V−1s−1, depending upon sample quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 503
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Pandya, R. and Schiff, E. A., Phil. Mag. B, 52 (6), 1075 (1985).Google Scholar
[2] Tiedje, T. and Rose, A., Sol. State Com., 37, 49 (1980).Google Scholar
[3] Orenstein, J. and Kastner, M. A., Sol. State Cora., 40, 85 (1981).Google Scholar
[4] Pipoz, P., Wälchli, N., Beck, H., Shah, A.. J. Non-Crys. Sol., 164–166, 525 (1993).Google Scholar
[5] Silver, M. and Coheen, L., Phys. Rev. B, 15, 3276 (1977).Google Scholar
[6] Noolandi, J., Phys. Rev. B, 16, 4466 (1977).Google Scholar
[7] Tiedje, T., Cebulka, J. M., Morel, D. L. and Abeles, B., Phys. Rev., 46 (21), 1425 (1981).Google Scholar
[8] Hattori, K., Adachi, Y., Anzai, M., Okamoto, H. and Hamakawa, Y., J. Appl. Phys., 76 (5), 2841 (1994).Google Scholar
[9] Longeaud, C. and Kleider, J. P. in 12th European Photovoltaic Solar Energy conference. edited by Hill, R., Palz, W. and Helm, P., Commission of the European Communities, (H.S. Stephens & Associates, Amsterdam, 1994) pp. 92–95.Google Scholar
[10] Curtins, H., Wyrsch, N., Favre, M. and Shah, A. V., Plasma chem. & Plasma Proc., 7, 267 (1987).Google Scholar
[11] Winer, K. and Ley, L. in Amorphous Silicon and Related Materials, vol. A. edited by Fritzsche, H., World Scientific Publishing Company, (1988) pp. 365–408.Google Scholar
[12] Jackson, W. B., Kelso, S. M., Tsai, C.C., Allen, J. W. and Oh, S.-J., Phys. Rev. B, 31 (8), 5187 (1985).Google Scholar
[13] Nebel, C. E., Weller, H. C. and Bauer, G. H. in Amorphous Silicon Technology, edited by Taylor, P. G., Thompson, M. J., LeComber, P. G., Hamakawa, Y. and Madan, A. (Mater. Res. Soc. Proc. 192, Pittsburgh, PA, 1990) pp. 151–156.Google Scholar
[14] Fauchet, P. M., Mourchid, A., Hulin, D., Tanguy, C. and Vanderhagen, R., J. Non-Crys. Sol., 114, 564 (1989).Google Scholar
[15] Juska, G., Kocka, J., Arlauskas, K. and Jukonis, G., Sol. State Com., 75 (6), 531 (1990).Google Scholar
[16] Devlen, R. I., Taue, J. and Schiff, E. A., J. Non-Crys. Sol., 114, 567 (1986).Google Scholar
[17] Spear, W. E., Amorphous Silicon and Related Materials, vol. B. edited by Fritzsche, H., World Scientific Publishing Company, (1988) pp. 721–765.Google Scholar
[18] Kroll, U., Meier, J., Goetz, M., Howling, A., Dorier, J.-L., Dutta, J., Shah, A. and Hollenstein, Ch., J. Non-Crys. Sol., 164–166, 59 (1993).Google Scholar
[19] Kroll, U. (private communication).Google Scholar
[20] Finger, F., Kroll, U., Viret, V., Shah, A., Tang, X.-M., Weber, J., Howling, A. and Hollenstein, Ch., J. Appl. Phys., 71 (11), 5665 (1992).Google Scholar