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Analysis of high-power packages for white-light-emitting diode lamps with remote phosphor

Published online by Cambridge University Press:  01 February 2011

Hong Luo ,
Jong Kyu Kim ,
Yangang Xi ,
E. Fred Schubert ,
Jaehee Cho ,
Cheolsoo Sone  and
Yongjo Park
Hong Luo
Affiliation:
luoh@rpi.edu, Rensselaer Polytechnic Institute, 110 8th ST, Troy, NY, 12180, United States, 518-276-3328
Jong Kyu Kim
Affiliation:
kimj4@rpi.edu
Yangang Xi
Affiliation:
xiy@rpi.edu
E. Fred Schubert
Affiliation:
efschubert@rpi.edu
Jaehee Cho
Affiliation:
j.cho@samsung.com
Cheolsoo Sone
Affiliation:
csone@samsung.com
Yongjo Park
Affiliation:
yongjo.park@samsung.com
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Abstract

An optimized packaging configuration for high-power white-light-emitting diode (LED) lamps that employs a diffuse reflector cup, a remote phosphor and a hemi-spherically-shaped encapsulation is presented. Ray tracing simulations for this configuration show that the phosphor efficiency can be enhanced by up to 50% over conventional packages. It is experimentally shown that dichromatic LED lamps with remote phosphor and diffuse reflector cup configuration have higher phosphor efficiency by 15.4% for blue-pumped yellow phosphor and by 27% for ultraviolet-pumped blue phosphor over conventional packages. Those improvements are attributed to reduced absorption of the phosphorescence by the LED chip and the reduction of deterministic optical modes trapped inside the encapsulant.

Keywords

packagingoptoelectronicoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF09-07
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCE

1. Steranka, F. M., Bhat, J., Collins, D., Cook, L., Craford, M. G., Fletcher, R., Gardner, N., Grillot, P., Keuper, M., Khare, R., Kim, A., Krames, M., Harbers, G., Ludowise, M., Martin, P.S., Misra, M., Mueller, G., Mueller-Mach, R., Rudaz, S., Shen, Y.-C., Steigerwald, D., Stockman, S., Subramanya, S., Trottier, T., and Wierer, J.J., Phys. Status. Solidi A 194, 380 (2002).3.0.CO;2-N>CrossRef3.0.CO;2-N>Google Scholar
2. Steigerwald, D. A., Bhat, J. C., Collins, D., Fletcher, R. M., Holcomb, M. W., Ludowise, M. J., Martin, P. S., and Rudaz, S. L., IEEE Journal on Selected Topics in Quantum Electronics 8, 310 (2002).CrossRefGoogle Scholar
3. Mueller-Mach, R., Mueller, G., Krames, M., and Trottier, T., IEEE Journal on Selected Topics in Quantum Electronics 8, 339 (2002).CrossRefGoogle Scholar
4. Kim, J. K., Luo, H., Schubert, E. F., Cho, J., Sone, C., and Park, Y., Japan. J. Appl. Phys. 44, L649 (2005)Google Scholar
5. Narendran, N., Narendran, N., Gu, Y., Freyssinier-Nova, J. P., and Zhu, Y., Phys. Status Solidi A 202, R60 (2005).CrossRefGoogle Scholar
6. Goetz, W., 5th International Conference on Nitride Semiconductor, ICNS-5, Nara, Japan, May 25–30 (2003).Google Scholar
7. Kim, Jong Kyu, Gessmann, Thomas, Luo, Hong, and Fred Schubert, E., Appl. Phys. Lett. 84, 4508 (2004).Google Scholar