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Analysis of Electric Fields, Space Charges, and Polarization of Thin-Film Ferroelectric Capacitors Based on Landau Theory

Published online by Cambridge University Press:  25 February 2011

Ciaran J. Brennan
Ciaran J. Brennan*
Affiliation:
The Charles Stark Draper Laboratory, Inc., 555 Technology Square, Cambridge, MA 02139
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Abstract

This paper describes a detailed physical analysis of the electric fields, space charges, and polarization of thin-film ferroelectric devices. The analysis is based on a previously developed model of the electric field dependent polarization, permittivity, and hysteresis of the thin-film polycrystalline ferroelectric, which was derived from the Landau-Devonshire theory. This paper includes the macroscopic effects related to device structure and composition, including potential barriers at contacts, domain relaxation, grain boundary surface charge, and interactions between the space charges and the non-linear polar displacement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 141
Copyright
Copyright © Materials Research Society 1992

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References

1. Brennan, C.J., “A Physical Model for the Electrical Hysteresis of Thin-Film Ferroelectric Capacitors”, submitted to Ferroelectrics, October 1991.Google Scholar
2. Sandomirskii, V.B., Khalilov, Sh.S., Chemskii, E.V., Soy. Phys.-Semicond., 16, 279–83 (1982).Google Scholar
3. Devonshire, A.F., Adv. Phys, 3, 85, (1954)Google Scholar
4. Fridken, V.M, Ferroelectric Semiconductors (Consultants Bureau, New York, 1980), ch. 3.Google Scholar
5. Brennan, C.J., “Characterization and Modelling of Thin-Film Ferroelectric Capacitors using C-V Analysis”, Proceedings of 3rd International Symposium on Integrated Ferroelectrics, Colorado Springs, CO (1991).Google Scholar
6. Fridken, V.M., “Characterization and Modelling of Thin-Film Ferroelectric Capacitors using C-V Analysis”, Proceedings of 3rd International Symposium on Integrated Ferroelectrics, Colorado Springs, CO (1991), ch. 3.4.Google Scholar
7. Spyucher, R., Buffat, P.A., Stadelmann, P., Heir. Phys. Acta., 6, 804–7 (1987).Google Scholar
8. Scott, J.F., Araujo, C.A., Meadows, H.B., McMillan, L.D., Shawabkeh, A., J. Appl. Phys.,66, 1444–53 (1989).Google Scholar
9. Kulkami, A.K., Rohrer, G.A., McMillan, L.D. and Adams, S.E., IEEEIIRPS (1989).Google Scholar
10. Grekov, A.A., Kazakova, V.V., Rodin, A.I., Savenko, F.I., Ferroelectrics, 117, 157–64 (1991).Google Scholar
11. Fridken, V.M., Grekov, A.A., Korchagina, N.A., Rogach, E.D., Rodin, A.I., Savencho, E.A., Ferroelectrics, 61,299–314 (1984).Google Scholar
12. Mehta, R.R., Silverman, B.D., Jacobs, J.T., J. Appl. Phys., 44, 3379–3385 (1973).Google Scholar