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Analysis of a TEOS/Oxygen Plasma: Influence of Energy and Particle Flux on the Deposition Parameters

Published online by Cambridge University Press:  10 February 2011

M. L. Pereira da Silva ,
A. N. Rodrigues da Silva  and
J. J. Santiago-Aviles
M. L. Pereira da Silva
Affiliation:
Laboratório de Sistemas Integráveis Departamento de Engenharia Eletrônica USP, SP, BRAZIL
A. N. Rodrigues da Silva
Affiliation:
Laboratório de Sistemas Integráveis Departamento de Engenharia Eletrônica USP, SP, BRAZIL
J. J. Santiago-Aviles
Affiliation:
University of Pennsylvania, Dept. of Electrical Engineering, 200 S, 33rd. St. Philadelphia, PA 19104, santiago@ee.upenn.edu
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Abstract

In this work we looked at deposition parameters such as rate and film microstructure during the plasma enhanced CVD processing of TEOS {Si (OCH2 CH3)4) + O2. This is a multi-component oxide due to the inevitable accidental inclusion of carbonatious contaminants. We decided to characterize the plasma parameters, namely the electron energy (from 50 to 600 eV), and the flux of the reactive species. The deposition chamber was modified by the introduction of a stainless steel tubular ring between the electrodes, such that when a positive bias is applied it is possible to inject electrons into the plasma. A dual role for the tubular ring is the transport of oxygen to different locations in the plasma, and to monitor the influence of the oxygen flux on deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 63
Copyright
Copyright © Materials Research Society 2000

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