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An Investigation of Vacancy Concentrations in Bulk Silicon

Published online by Cambridge University Press:  03 September 2012

Horst Zimmermann  and
H. Ryssel
Horst Zimmermann
Affiliation:
Fraunhofer-Arbeitsgruppe für Integrierte Schaltungen, Artilleriestrasse 12, W-8520 Erlangen, Germany
H. Ryssel
Affiliation:
Fraunhofer-Arbeitsgruppe für Integrierte Schaltungen, Artilleriestrasse 12, W-8520 Erlangen, Germany
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Abstract

A method will be presented, which allows the quantitative determination of distributions of single vacancies in bulk silicon. The method uses deep level transient spectroscopy (DLTS) measurements of the platinum or gold concentration after diffusion at a low temperature. An analytical expression allows the calculation of the vacancy concentration from the measured platinum or gold concentration. Vacancy concentrations vary at least from 2.0×1012 to 2.2×1014 cm3 in float zone silicon. The vacancy concentrations in Czrochalski (CZ) silicon are in the range of 4×1012 to 2×1013 cm3. Microwave photoconductive decay instead of DLTS allows much faster measurements of vacancy distributions on whole wafers. Furthermore, both methods allow the investigation of oxygen precipitation in CZ silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 31
Copyright
Copyright © Materials Research Society 1992

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References

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