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An Investigation of the Influence of Orientation on CMP through Nanoscratch Testing

Published online by Cambridge University Press:  31 January 2011

Sarah Neyer ,
Burak Ozdoganlar  and
C. Fred Higgs
Sarah Neyer
Affiliation:
sneyer@andrew.cmu.edu, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States
Burak Ozdoganlar
Affiliation:
ozdoganlar@cmu.edu, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States
C. Fred Higgs
Affiliation:
higgs@andrew.cmu.edu, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania, 15213, United States
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Abstract

With the increase in integrated circuit (IC) feature density, the quality of chemical mechanical polishing (CMP) becomes more important as the copper interconnects decrease in size. The optimization of the IC manufacturing process will be greatly enhanced if the nanoscale effects on CMP are better understood. CMP-related wear at the sub-micron scale, where a single particle affects the microstructure of individual copper features within the substrate, needs to be investigated to account for wafer-scale variations. Hardness is known to affect the material removal rate, but the grain level mechanism of the removal process is not yet well known. In this work, the orientation-dependence of wear has been investigated by performing nanoscale scratch tests on single crystal copper along different crystallographic planes, indentified using orientation imaging microscopy (OIM). An analysis of the surface forces and post-scratch topography produced during the scratch tests was conducted and the results have been interpreted from a CMP perspective. Ultimately, these results are expected to refine existing material removal rate models which do not consider the sensitivity of microstructure on the CMP process.

Keywords

CMPCumicrostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1157: Symposium E – Science and Technology of Chemical Mechanical Planarization (CMP) , 2009 , 1157-E06-03
Copyright
Copyright © Materials Research Society 2009

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References

[1] Larsen-Basse, J., “Role of microstructure and mechanical properties in abrasion,” Scripta metallurgica, vol. 24, 1990, pp. 821–826.Google Scholar
[2] Zhao, Y. and Chang, L., “A micro-contact and wear model for chemical–mechanical polishing of silicon wafers,” Wear, vol. 252, 2002, pp. 220–226.Google Scholar
[3] Flom, D.G. and Komanduri, R., “Some indentation and sliding experiments on single crystal and polycrystalline materials,” Wear, vol. 252, 2002, pp. 401–429.Google Scholar
[4] Bailey, J.M. and Gwathmey, A.T., “Friction and Surface Deformation During Sliding on a Single Crystal of Copper,” Tribology Transactions, vol. 5, 1962, pp. 45–56.Google Scholar
[5] Liu, Y., Varghese, S., Ma, J., Yoshino, M., Lu, H., and Komanduri, R., “Orientation effects in nanoindentation of single crystal copper,” International Journal of Plasticity, 2008.Google Scholar
[6] Wang, Y., Raabe, D., Klüber, C., and Roters, F., “Orientation dependence of nanoindentation pile-up patterns and of nanoindentation microtextures in copper single crystals,” Acta Materialia, vol. 52, 2004, pp. 2229–2238.Google Scholar
[7] Zhu, H., Tessaroto, L.A., Sabia, R., Greenhut, V.A., Smith, M., and Niesz, D.E., “Chemical mechanical polishing (CMP) anisotropy in sapphire,” Applied Surface Science, vol. 236, 2004, pp. 120–130.Google Scholar
[8] Saka, N., Eusner, T., and Chun, J.H., “Nano-scale scratching in chemical–mechanical polishing,” CIRP Annals-Manufacturing Technology, vol. 57, 2008, pp. 341–344.Google Scholar
[9] Tayebi, N., Conry, T.F., and Polycarpou, A.A., “Determination of hardness from nanoscratch experiments: Corrections for interfacial shear stress and elastic recovery,” J. Mater. Res, vol. 18, 2003.Google Scholar