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Amorphous WSi0.45 Metallization for Self-Aligned GaAs MESFETs

Published online by Cambridge University Press:  26 February 2011

Alex Lahav
Alex Lahav*
Affiliation:
AT&T Bell Laboratories, Reading PA, 19612
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Abstract

Crystallization temperature (Tc) of amorphous WSix films on GaAs was studied as a function of the Si/W ratio. The highest Tc of 875°C for a 20 min anneal was obtained for co-sputtered WSMi films with the Si/W ratio of 0.45 (31 at.% Si). The WSi0.45 films remained amorphous following implant activation anneal and served as a barrier to Ga and As outdiffusion. Pitting of GaAs under the contact was also prevented. The WSi0.45 composition corresponds to the eutectic point between the W and W5Si3 phases, which was explained by the strong glass-forming tendency of eutectic alloys. Amorpous WSi0.45 films formed stable Schottky contacts to n-GaAs and produced minimum reduction of carrier concentration in the substrate. Therefore, the Si/W ratio of 0.45 is suggested as optimal for the WSix refractory gate metallization in self-aligned GaAs MESFErs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 601
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Shur, M., GaAs Devices and Circuits, (Plenum Press, New York, 1987).CrossRefGoogle Scholar
2. Gupta, D., Campbell, D.K. and Ho, P.S., in Thin Films - Interdiffusion and Reactions, edited by Poate, J.M., K.N., Tu and J.W., Mayer (Wiley, New York, 1978), p. 161.Google Scholar
3. Wiley, J.D., Perepezko, J.H., Nordman, J.E. and Guo, K.J., IEEE Trans. on Ind. Electronics, IE–29, 154 (1982).CrossRefGoogle Scholar
4. Anderson, W.T. Jr., Christou, A. and Davey, J.E., Thin Solid Films, L 04, 57 (1983).CrossRefGoogle Scholar
5. Nicolet, M.A., Suni, I. and Finetti, M., Solid State Technology, 11, 129 (1983).Google Scholar
6. Thomas, R.E., Perepezko, J.H. and Wiley, J.D., Appl. Surf. Science, 26, 534 (1986).CrossRefGoogle Scholar
7. Thomas, R.E., Perepezko, J.H. and Wiley, J.D., in Thin Films - Interfaces and Phenomena, edited by Nemanich, R.J., P.S., Ho and S.S., lau, (Mater. Res. Soc. Proc. 54, Pittsburgh, PA 1986) pp. 127–132.Google Scholar
8. Yokoyama, N., Ohnishi, T., Onodera, H., Shinoki, T., Shibatomi, A. and Ishikawa, H., IEE Journal of Solid-State Circuits, SC–18, 520 (1983).CrossRefGoogle Scholar
9. Onishi, T., Yokoyama, N., Onodera, H., Shinoki, T. and Shibatomi, A., Appl. Phys. Letters, 43, 600 (1983).CrossRefGoogle Scholar
10. Takatani, S., Matsuoka, N., Shigeta, J. and Hashimoto, N., J. Appl.Phys. 61, 220 (1987).CrossRefGoogle Scholar
11. Kanamori, M., Nagai, K. and Nozaki, T., J. Vac. Sci. Technol. B5, 1317 (1987).CrossRefGoogle Scholar
12. Jackson, T.N. and DeGelormo, J.F., J.Vac.Sci. Technol. B3, 1676 (1985).CrossRefGoogle Scholar
13. Callegari, A., Spiers, G.D., Magerein, J.H. and Guthrie, H.C., J. Appl. Phys., 61, 2054 (1987).CrossRefGoogle Scholar
14. Binary Alloy Phase Diagrams, edited by Massalski, T.B. et al. (American Society for Metals, Metals Park, Ohio, 1987) p.2063.Google Scholar
15. Turnbull, D., Contemp. Phys., 10, 473 (1969).CrossRefGoogle Scholar
16. Marcus, M. and Turnbull, D., Mater. Sci. and Engineering, 23, 211 (1976).CrossRefGoogle Scholar
17. Donald, I.W. and Davies, H.A., J. of Non-Crystallne Solids, 30, 77 (1978).CrossRefGoogle Scholar
18. Lahav, A., Wu, C.S. and Baiocchi, F.A., J.Vac.Sci. Technol. B6, (1988).Google Scholar
19. Lau, S.S., Chen, W.X., Marshall, E.D., Pai, C.S., Tseng, W.F. and Kuech, T.F., Appl. Phys. Lett. 47, 1298 (1985).CrossRefGoogle Scholar