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Amorphous to Polycrystalline Transformation in High Dose Ion Implanted Silicon

Published online by Cambridge University Press:  26 February 2011

E. Nygren ,
J. C. Mccallum ,
R. Thornton ,
J. S. Williams  and
G. L. Olson
E. Nygren
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Australia
J. C. Mccallum
Affiliation:
Melbourne University, School of Physics, Parkville 3052, Australia
R. Thornton
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Australia
J. S. Williams
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Australia
G. L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA, 90625, U.S.A.
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Abstract

The amorphous to polycrystalline transformation of silicon implanted with high doses of In, Bi, Ga, and Sn is investigated. Each of these elements forms a low temperature eutectic with crystalline silicon and the details of the phase transformations in these systems are found to be very similar. A general model for the transformation based on the nature of the binary solutions is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 405
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1] Fletcher, J., Narayan, J. and Holland, O.W., Inst. Phys. Conf. Ser. 52, 271 (1985)Google Scholar
[2] Christodoulides, C.E., Carter, G. and Williams, J.S., Rad. Eff. 48, 91 (1980)Google Scholar
[3] Lee, Y.-H., Harrison, H.B., Pogany, A.P. and Olson, G.L., Mater. Res. Soc. Symp. Proc. 92, 21 (1987)Google Scholar
[4] Nygren, E. et al, Mater. Res. Soc. Symp. Proc. 74, 307 (1987)CrossRefGoogle Scholar
[5] Nygren, E. et al, to be published Appl. Phys. Lett.Google Scholar
[6] Tsao, J.Y. and Peercy, P.S., Phys. Rev. Lett. 58, 2782 (1987)Google Scholar
[7] Wagner, R.S. and Ellis, W.C., Appl. Phys. Lett. 4, 89 (1964) and R.S. Wagner in Whisker Technology, edited by A.P. Levitt (Wiley Interscience, New York, 1970), p. 47Google Scholar
[8] Anthony, T.R. and Cline, H.E., J. Appl. Phys. 43, 2473 (1972)Google Scholar
[9] to be publishedGoogle Scholar
[10] Olson, G.L. et al, Appl. Phys. Lett. 37, 1019 (1980)Google Scholar
[11] Kelton, K.F., Greer, A.L. and Thompson, C.V., J. Chem. Phys. 79, 6261 (1983)Google Scholar
[12] Thornton, R., Nygren, E. and Williams, J.S., 5th Proc. Nuclear Techniques of Analysis Conf., NSW, Australia (1987)Google Scholar
[13] Pennycook, S.J., Culbertson, R.J. and Narayan, J., J. Mat. Res. 1, 476 (1986)CrossRefGoogle Scholar