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Amorphous Silicon Thin Film Transistors Produced by Atmospheric Pressure CVD

Published online by Cambridge University Press:  22 February 2011

Byung Chul Ann ,
Jeong Hyun Kim ,
Chan Hee Hong ,
Woo Yeol Kim ,
Kwang Nam Kim ,
Hee Kyung Kang  and
Jin Jang
Byung Chul Ann
Affiliation:
Anyang Research Lab., GoldStar Co., Anyang-shi, Korea
Jeong Hyun Kim
Affiliation:
Anyang Research Lab., GoldStar Co., Anyang-shi, Korea
Chan Hee Hong
Affiliation:
Anyang Research Lab., GoldStar Co., Anyang-shi, Korea
Woo Yeol Kim
Affiliation:
Anyang Research Lab., GoldStar Co., Anyang-shi, Korea
Kwang Nam Kim
Affiliation:
Dept. of Physics, Kyung Hee University, Seoul 130–701, Korea
Hee Kyung Kang
Affiliation:
Dept. of Physics, Kyung Hee University, Seoul 130–701, Korea
Jin Jang
Affiliation:
Dept. of Physics, Kyung Hee University, Seoul 130–701, Korea
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Abstract

We have studied the preparation and device application of a-Si by atmospheric pressure CVD using disilane. The deposition rate of a-Si increases with the partial pressure of disilane and with the total pressure. The deposition rate of APCVD a-Si is, therefore, very high compared with LPCVD. The photosensitivity of APCVD a-Si is 104 at 100mW/cm2. We have made an inverse staggered type a-Si TFT using SiO2 as a gate insulator. The on/off current ratio and field effect mobility are 105 and 0.19cm2/Vs, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 407
Copyright
Copyright © Materials Research Society 1993

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References

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