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Amorphous Silicon Sensor Arrays for Radiation Imaging

Published online by Cambridge University Press:  25 February 2011

R. A. Street ,
S. Nelson ,
L. Antonuk  and
V. Perez Mendez
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
S. Nelson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
L. Antonuk
Affiliation:
Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109
V. Perez Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720.
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Abstract

Large two-dimensional a-Si:H imaging arrays have applications in imaging of X-ray, gamma-ray and charged particle fluxes. Radiation imaging using a-Si:H p i n sensors together with a phosphor to transform the radiation into visible light is described, and some examples of images are shown. These arrays are very efficient in imaging large area diffuse sources, and the a-Si:H sensors have little radiation damage. The main limitation to the sensitivity of the array is the leakage current of the sensors, which is a source of noise and limits the integration time of the arrays. The contributions to the leakage current from bulk thermal generation and contact injection are discussed

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 441
Copyright
Copyright © Materials Research Society 1990

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References

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