Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-25T12:33:43.763Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous Silicon Image Sensor Arrays

Published online by Cambridge University Press:  21 February 2011

M J Powell ,
I D French ,
J R Hughes ,
N C Bird ,
O S Davies ,
C Glasse  and
J E Curran
M J Powell
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
I D French
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
J R Hughes
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
N C Bird
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
O S Davies
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
C Glasse
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
J E Curran
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
Get access

Abstract

We have developed a technology for 2D matrix-addressed image sensors using amorphous silicon photodiodes and thin film transistors. We have built a small prototype, having 192×192 pixels with a 20μm pixel pitch, and assessed its performance. The nip photodiodes can have dark current densities of less than 1011 A.cm-2 (up to 5V reverse bias) and peak quantum efficiencies of 88% (at 580nm). We operated the sensor in real time mode at high speed (50 Hz frame rate and 64μS line time). The image sensor has a low noise performance giving a dynamic range in excess of 104. The maximum crosstalk is about 2%, which allows at least 50 grey levels. The bottom contact of the photodiode acts as a light shield from light through the substrate, which enables the sensor to be operated as an intimate contact image sensor to image a document placed directly on top of the array. In this mode, the CTF was 75% at 2 lp.mm1. Good quality images are demonstrated in both front projection and intimate contact imaging modes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1127
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Street, R A, Nelson, S, Antonuk, L, and Perez-Mendez, V, Materials Research Society Symposia Proceedings 192 441 (1990);Google Scholar
Fujieda, I, Nelson, S, Street, R A and Weisfïeld, R L, Materials Research Society Symposia Proceedings 219 537 (1991).Google Scholar
[2] Mimura, H, Sai, K, Ohta, Y, Yamamoto, K and Kitamura, K, Applied Surface Science 48–49 521 (1991)Google Scholar
[3] Perez-Mendez, V, Cho, G, Drewery, J, Jing, T, Kaplan, S N, Quershi, S, Wildermuth, D, Fujieda, I and Street, R A, Journal of Non-Crystalline Solids 137–138 1291 (1991)Google Scholar
[4] Ito, H, Suzuki, T, Nobue, M, Nishihara, Y, Sakai, Y, Ozawa, T and Tomiyama, S, Materials Research Society Symposia Proceedings 95 437 (1987)Google Scholar
[5] Hayase, M and Arita, H, Materials Research Society Symposia Proceedings 192 413 (1990)Google Scholar
[6] Kakinuma, H, Mohri, M, Sakamoto, M, Sawai, H, Shibata, S, Kasuya, Y, Ohnuki, Y and Chonan, W, IEEE Electron Device Letters 12 413 (1991)Google Scholar
[7] Stutzmann, M, Jackson, W B and Tsai, C C, Physical Review B 32 23 (1985)Google Scholar
[8] Street, R A, Philosophical Magazine B 63 1343 (1991)Google Scholar
[9] Nishihara, Y, Nobue, M, Abe, T, Miyake, H, Ito, H, Ozawa, T and Hamano, T, Journal of Non-Crystalline Solids 115 183 (1989)Google Scholar
[10] Fujieda, I, Nelson, S, Street, R A and Weisfield, R L, IEEE Nuclear Science Symposium, Sante Fe, November 1991.Google Scholar
[11] Wieczorek, H, Journal of Non-Crystalline Solids 137–138 1309 (1991).CrossRefGoogle Scholar