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Amorphous Phase Transformation During Rapid Thermal Annealing of Ion-Implanted Si

Published online by Cambridge University Press:  26 February 2011

D. Kirillov ,
R. A. Powell  and
D. T. Hodul
D. Kirillov
Affiliation:
Varian Research Center 611 Hansen Way, Palo Alto, CA 94303
R. A. Powell
Affiliation:
Varian Research Center 611 Hansen Way, Palo Alto, CA 94303
D. T. Hodul
Affiliation:
Varian Research Center 611 Hansen Way, Palo Alto, CA 94303
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Abstract

Variations in the local order of the amorphous phase of Si produced by ion implantation and subjected to rapid thermal annealing were studied using the Raman scattering technique. It was found that the low order amorphous phase was formed independently of implantation ion species for low dose, low energy implantation at room temperature. For high energy, high dose implantation with heavy ions, the ion beam annealing effects were apparent and the higher order amorphous phase was formed. Rapid thermal annealing produced transformation from the low order phase to the high order amorphous phase. The continuous transformation was completed when the detectable crystalline phase regrowth started.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 131
Copyright
Copyright © Materials Research Society 1986

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