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Amorphous IGZO TFTs and Circuits on Highly Flexible and Dimensionally Stable Kovar (Ni-Fe alloy) Metal Foils

Published online by Cambridge University Press:  22 September 2011

Shahrukh A. Khan ,
Xiaoxiao Ma ,
Nack Bong Choi  and
Miltiadis Hatalis
Shahrukh A. Khan
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Xiaoxiao Ma
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Nack Bong Choi
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Miltiadis Hatalis
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
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Abstract

We have fabricated high performance amorphous IGZO TFTs and integrated circuits on flexible kovar (Ni-Fe 42 alloy) foils. Excellent dimensional stability on kovar foils is obtained by a pre-anneal process at 800°C that limits the thermal run-out to within 100ppm. After substrate annealing, Ni-Fe 42 alloy retains high yield strength and good flexibility with the re-crystallized structure containing large isotropic grains between 20-50μm. Amorphous IGZO TFTs and circuits with a staggered, bottom-gate architecture are fabricated and tested. Non-flexed TFTs have field effect mobility of 12 cm2/V.s, threshold voltage around 2 V and sub-threshold swing of 0.6 V/decade and ON/OFF current ratio exceeding 107. Under prolonged uniaxial tensile strain upto 0.8%, TFTs exhibited minimal change in performance which augers well for use of Ni-Fe foil as flexible substrates. To demonstrate the viability of oxide-based device integration, n-type pseudo logic ring oscillator circuits are also evaluated. Sub 300 ns propagation delay is confirmed at a rail-rail supply voltage of 40 V. The results suggest that device integration on such a highly flexible substrate is amenable to roll-to-roll processing of future electronics.

Keywords

thin filmcrystallographic structuredevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f08-16
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

[1] Stein, A., Liss, A., Dintinger, W., Rosedale, J., Hester, C., SID Int. Symp. XXVII, 11 (1996).Google Scholar
[2] Cheon, J. H., Choi, J. H., Hur, J. H., Jang, J., Shin, H. S., Jeong, J. K., Mo, Y. G., and Chung, H. K., IEEE Trans. Electron Devices, 53, 1273 (2006).Google Scholar
[3] Ma, E. Y. and Wagner, S., Mater. Res. Soc. Symp. Proc. 507, 13(1998).Google Scholar
[4] Ma, X. and Hatalis, M.K., Flextech Conf. Proc.. (2010)Google Scholar
[5] Jamshidi-Roudbari, A., Khan, S.A., Hatalis, M.K., IEEE Electron Device Letters, 31, 320 (2010).Google Scholar
[6] Chen, J-Z., Cheng, I-C., Wagner, S, Jackson, W., Perlov, C., and Taussig, C., Mater. Res. Soc. Symp. Proc. 989 (2007).Google Scholar
[7] Gleskovaa, H. and Wagner, S., J. Appl. Phys. 92, 6224 (2002).Google Scholar
[8] Khan, S.A., Kuo, P-C., Jamshidi-Roudbari, A and Hatalis, M. K., Device Res. Conf. Proc. 5551869 (2010).Google Scholar
[9] Ofuji, M., Abe, K., Shimizu, H., Kaji, N., Hayashi, R., Sano, M., Kumomi, H., Nomura, K., Kamiya, T., and Hosono, H., IEEE Electron Device Letters, 28, 273 (2007).Google Scholar