Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-19T18:58:26.326Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphisation, Crystallisation And Related Phenomena In Silicon

Published online by Cambridge University Press:  26 February 2011

J.S. Williams
J.S. Williams*
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia.
Get access

Abstract

This review examines recently observed phenomena associated with amorphisation and crystallisation of silicon under ion bombardment and furnace annealing. Ideally, heavy ion damage should completely amorphise the silicon surface layers so that the underlying crystal can provide a perfect template for subsequent epitaxial growth. However, in practise the ion bombardment and annealing behaviour can be decidedly more complex. During ion bombardment of silicon, several correlated processes can take place depending on the target temperature and the precise bombardment conditions. These processes include: defect production; amorphisation; diffusion and segregation of defects and impurities; and ion-beam-induced (epitaxial) crystallisation. During subsequent heat treatment, amorphous layers can exhibit anomalous impurity diffusion and precipitation effects, nucleation of random crystallites, and solid phase epitaxial growth. In addition, the kinetics of the epitaxial growth process are sensitive to the type and state of implanted impurities present in the silicon. The competition between random nucleation and epitaxy is also dominated by impurity effects. Finally, correlations between all of these phenomena provide i) considerable insight into impurity and defect behaviour in amorphous and crystalline silicon, and ii) a better understanding of the amorphous to crystalline phase transition, including mechanisms of solid phase epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 83
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Brown, W.L., these proceedings.Google Scholar
[2] Turnbull, D., these proceedings.Google Scholar
[3] Csepregi, L., Mayer, J.W. and Sigmon, T.W. Phys. Lett. 54A, 157 (1975).Google Scholar
[4] Mayer, J.W., Eriksson, L. and Davies, J.A., “Ion Implantation in Semiconductors”, Academic Press, N.Y. (1970).Google Scholar
[5] Csepregi, L., Kennedy, E.F., Gallagher, T.J., Mayer, J.W. and Sigmon, T.W.. J. Appl. Phys. 48, 4234 (1977).Google Scholar
[6] Csepregi, L., Kennedy, E.F., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 49, 3906 (1978).Google Scholar
[7] Kennedy, E.F., Csepregi, L., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 48, 4241 (1977).Google Scholar
[8] Olson, G.L., Kokorowski, S.A., Roth, J.A. and Hess, L.D., Mat. Res. Soc. Symp. Proc. 13, 141 (1983).CrossRefGoogle Scholar
[9] Spaepen, F. and Turnbull, D.. In “Laser Annealing of Semiconductors”, Poate, J.M. and Mayer, J.W., Eds. Academic Press, N.Y. (1982) p.15.CrossRefGoogle Scholar
[10] Narayan, J., J. Appl. Phys. 53, 8607 (1982).Google Scholar
[11] Suni, I., Goltz, G., Nicolet, M.A. and Lau, S.S., Thin Solid Films 93, 171 (1982).Google Scholar
[12] Williams, J.S. and Elliman, R.G., Phys. Rev. Lett. 51, 1069 (1983).Google Scholar
[13] Morehead, F. Jr and Crowder, B.L., Rad. Eff. 25, 49 (1970).Google Scholar
[14] Williams, J.S. and Poate, J.M. “Ion Implantation and Beam Processing”, Academic Press, Sydney (1984) Ch.2.Google Scholar
[15] Corbett, J.W., Karins, J.P. and Tan, T.Y., Nucl. Inst. Meth. 182/183, 457 (1981).CrossRefGoogle Scholar
[16] Christel, L.A., Gibbons, J.F. and Sigmon, T.W., J. Appl. Phys. 52, 7143 (1981); and Ch.3 in [14].CrossRefGoogle Scholar
[17] Swanson, M.L., Parsons, J.R. and Hoelke, C.W., Rad. Eff. 9, 249 (1971).Google Scholar
[18] Davies, J.A., Ch.4 in [14].Google Scholar
[19] Eisen, F.H. and Welch, B., Rad. Eff. 7, 143.CrossRefGoogle Scholar
[20] Beanland, D.G., Ch.8 in [14].Google Scholar
[21] Holland, O.W., Narayan, J. and Fathy, D., Nucl. Instr. Meth. 7/8, 243 (1985).Google Scholar
[22] Bubb, I.F. et al. Nucl. Instr. Meth. B2, 761 (1984).CrossRefGoogle Scholar
[23] Short, K.T. et al. Mat. Res. Soc. Symp. Proc. 27, 247 (1984).Google Scholar
[24] Elliman, R.G., Williams, J.S., Johnson, S.T. and Pogany, A.P., Nucl. Instr. Meth. (in press).Google Scholar
[25] Donovan, E.P., Ph.D. thesis, Harvard University (1982).Google Scholar
[26] Linnros, J., Svensson, B. and Holmen, G., Phys. Rev. B30, 3629 (1984).Google Scholar
[27] Williams, J.S., Brown, W.L., Elliman, R.G. and Seidel, T.E., Mat. Res. Soc. Symp. Proc. 35, (1985).Google Scholar
[28] Elliman, R.G., Williams, J.S., Brown, N.L. and Maher, D.M., these proceedings.Google Scholar
[29] Elliman, R.G., Johnson, S.T., Pogany, A.P. and Williams, J.S., Nucl. Inst. Meth. B7/8, 310 (1985).Google Scholar
[30] Cullis, A.G., Seidel, T.E. and Meek, R.L., J. Appl. Phys. 49, 5188 (1978).Google Scholar
[31] Williams, J.S. and Elliman, R.G., Appl. Phys. Lett. 40, 226 (1982).Google Scholar
[32] Elliman, R.G., Gibson, J.M., Poate, J.M., Jacobson, D.C. and Williams, J.S., Appl. Phys. Lett. 46, 478 (1985)Google Scholar
[33] Elliman, R.G., Williams, J.S., Poate, J.M., Jacobson, D.C., Gibson, J.M. and Sood, D.K., these proceedings.Google Scholar
[34] Elliman, R.G., Poate, J.M., Short, K.T. and Williams, J.S. to be published.Google Scholar
[35] Trumbore, F., Bell. Syst. Tech. Journal 35, 205 (1960).CrossRefGoogle Scholar
[36] Jacobson, D.C., Poate, J.M. and Olson, G.L., Appl. Phys. Lett. (in press).Google Scholar
[37] Herd, S.R., Chaudhari, P. and Brodsky, M.H., J. Non. Cryst. Sol. 7, 309 (1972).CrossRefGoogle Scholar