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Aluminum-Titanium Multilayer Interconnect With Titanium Diffusion Barrier

Published online by Cambridge University Press:  26 February 2011

S. Tong-Lee ,
Tzuen-Luh Huang ,
L. Van Den Hove  and
D. N. Nichols
S. Tong-Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
Tzuen-Luh Huang
Affiliation:
Electronics Research Laboratories, Photographic Products Group, Eastman Kodak Company, Rochester, NY 14650
L. Van Den Hove
Affiliation:
IMEC Laboratory, Kateldrees 75, Leuven, Belgium
D. N. Nichols
Affiliation:
Electronics Research Laboratories, Photographic Products Group, Eastman Kodak Company, Rochester, NY 14650
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Abstract

The metallurgical reaction at 450°C in forming gas ambient between the Ti diffusion barrier and Al, causing the contact degradation in the Al (1% Si)-Ti multilayer interconnects has been studied. The Ti-Al reaction is reduced by preheating the Ti layer in N2 using rapid thermal processing (RTP) at 2.500°C. The curtailed reaction is attributed to the thin surface titanium oxynitride layer. It was found that a 1000-Å Ti layer inserted between the multilayer and Si is effective as a sacrificial diffusion barrier against contact degradation, but 500-Å Ti is not. RTP of the thin Ti film rendered it effective as a diffusion barrier.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 531
Copyright
Copyright © Materials Research Society 1987

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References

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