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AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications

Published online by Cambridge University Press:  17 March 2011

P. Lamarre ,
A. Hairston ,
S. Tobin ,
K. K. Wong ,
M. F. Taylor ,
A. K. Sood ,
M. B. Reine ,
M. J. Schurman ,
I. T. Ferguson  and
R. Singh
...Show all authors
P. Lamarre
Affiliation:
BAE SYSTEMS, Lexington, Massachusetts and Nashua, New Hampshire, U.S.A.
A. Hairston
Affiliation:
BAE SYSTEMS, Lexington, Massachusetts and Nashua, New Hampshire, U.S.A.
S. Tobin
Affiliation:
BAE SYSTEMS, Lexington, Massachusetts and Nashua, New Hampshire, U.S.A.
K. K. Wong
Affiliation:
BAE SYSTEMS, Lexington, Massachusetts and Nashua, New Hampshire, U.S.A.
M. F. Taylor
Affiliation:
BAE SYSTEMS, Lexington, Massachusetts and Nashua, New Hampshire, U.S.A.
A. K. Sood
Affiliation:
BAE SYSTEMS, Lexington, Massachusetts and Nashua, New Hampshire, U.S.A.
M. B. Reine
Affiliation:
BAE SYSTEMS, Lexington, Massachusetts and Nashua, New Hampshire, U.S.A.
M. J. Schurman
Affiliation:
Emcore Corporation, Somerset, New Jersey, U.S.A.
I. T. Ferguson
Affiliation:
Emcore Corporation, Somerset, New Jersey, U.S.A.
R. Singh
Affiliation:
ECE Dept. and Photonics Center, Boston University, Boston, Massachusetts, U.S.A.
C. R. Eddy
Affiliation:
ECE Dept. and Photonics Center, Boston University, Boston, Massachusetts, U.S.A.
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Abstract

This paper presents UV imaging results for a 256×256 AlGaN Focal Plane Array that uses a back-illuminated AlGaN heterostructure p-i-n photodiode array, with 30×30 μm2 unit cells, operating at zero bias voltage, with a narrow-band UV response between 310 and 325 nm. The 256×256 array was fabricated from a multilayer AlGaN film grown by MOCVD on a sapphire substrate. The UV response operability (>0.4×average) was 94.8%, and the UV response uniformity (σ/μ) was 16.8%. Data are also presented for back-illuminated AlGaN p-i-n photodiodes from other films with cutoff wavelengths ranging between 301 and 364 nm. Data for variable-area diagnostic arrays of p-i-n AlGaN photodiodes with a GaN absorber (cutoff=364 nm) show: (1) high external quantum efficiency (50% at V=0 and 62% at V=-9 V); (2) the dark current is proportional to junction area, not perimeter; (3) the forward and reverse currents are uniform (σ/μ=50% for forty 30×30 μm2 diodes at V=−40 V); (4) the reverse-bias dark current data versus temperature and bias voltage can be fit very well by a hopping conduction model; and (5) capacitance versus voltage data are consistent with nearly full depletion of the unintentionally-doped 0.4 μm thick GaN absorber layer and imply a donor concentration of 3-4×1016 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G10.9
Copyright
Copyright © Materials Research Society 2001

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References

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