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Ain Thin Films Prepared by Reactive Ion Beam Coating

Published online by Cambridge University Press:  10 February 2011

L. L. Cheng ,
Y H. Yu ,
B. Sundaravel ,
E. Z. Luo ,
S. Lin ,
Y M. Lei ,
C. X. Ren ,
W. Y. Cheung ,
S. P. Wong  and
J. B. Xu
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L. L. Cheng
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China. graduate@itsvr.sim.ac.cn
Y H. Yu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China. graduate@itsvr.sim.ac.cn Chinese University of Hong Kong, Hong Kong, China.
B. Sundaravel
Affiliation:
Chinese University of Hong Kong, Hong Kong, China.
E. Z. Luo
Affiliation:
Chinese University of Hong Kong, Hong Kong, China.
S. Lin
Affiliation:
Chinese University of Hong Kong, Hong Kong, China.
Y M. Lei
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China. graduate@itsvr.sim.ac.cn
C. X. Ren
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China. graduate@itsvr.sim.ac.cn
W. Y. Cheung
Affiliation:
Chinese University of Hong Kong, Hong Kong, China.
S. P. Wong
Affiliation:
Chinese University of Hong Kong, Hong Kong, China.
J. B. Xu
Affiliation:
Chinese University of Hong Kong, Hong Kong, China.
I. H. Wilson
Affiliation:
Chinese University of Hong Kong, Hong Kong, China.
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Abstract

Aluminum Nitride (AIN) is a promising material for a variety of technological applications because it has many exceptional properties, such as wide band gap (WBG) and negative electron affinity (NEA). AIN thin films were prepared by Reactive Ion Beam Coating. The properties of the AIN thin films may be a function of one of the preparation conditions: the beam energy. We used the non-Rutherford backscattering (non-RBS) and Auger Electron Spectroscopy (AES) results to analyze the composition of the AIN thin films. Atomic Force Microscopy (AFM) was applied to study the morphology of films. On the other hand, electron field emission properties were also studied to find the relationship between the compositional, morphological and electron field emission properties of the AIN thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 251
Copyright
Copyright © Materials Research Society 2000

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References

1. Bienk, I. E. J., Jensen, H., Pedersen, G. N., Sorensen, S., Thin Solid Films 230, 121(1993).Google Scholar
2. Shiosaki, T., Yamamoto, T., Oda, T., Kawabata, A., Appl. Phys. Lett. 36, 643(1980).Google Scholar
3. Yim, W. M., Stofko, E. J., Zanzucchi, P. J., Pankove, J. I., Erremberg, M. and Gilbert, S. L., J. Appl. Phys. 44, 292(1973).Google Scholar
4. Tsubouchi, K., Sagai, K. and Mikoshiba, , Proc. IEEE Symp. Ultrason. 14, 340(1983).Google Scholar
5. Vispute, R. D., Narayan, J., Wu, H., Jagannadham, K., J. Appl. Phys. 77, 4724(1995).Google Scholar
6. Kim, I. H., J. Vac. Sci. Technol. A 13, 2814(1995).Google Scholar
7. Dupuie, J. L. and Gulari, E., J. Vac. Sci. Technol. A 10, 18(1992).Google Scholar
8. Rushworth, S. A., Brown, J. R., Houlton, D. J. and Jones, A. C., Adv. Mater. Opt. Electron. 6, 119(1996).Google Scholar
9. Yoder, M. N., IEEE Trans. Electron. Dev. 43, 1633(1995).Google Scholar
10. Chen, D. H., Wong, S. P., Chueng, W. Y., Wu, W., Luo, E. Z., Xu, J. B., Wilson, I. H., and Kwok, R. W. M., Appl. Phys. Lett. 72, 1926(1998).Google Scholar
11. Zhang, Y. C., Wu, Y. M., Ren, C. X., Fu, X. D. and Chen, G. M., Nucl. Instrum. Meth. B 6, 447(1985).Google Scholar
12. SIMNRA version4.4, copyright Max-Planck-Institut fujr Plasmaphysik, 1997, 1998.Google Scholar
13. Szalkowski, F. J., Somorjai, A., J. Chem. Phys. 56, 6097(1972).Google Scholar
14. Madden, H. H., J. Vac. Sci. Technol. 18, 677(1981).Google Scholar
15. Calleja, E., Sauchez-Garcia, M. A., Monroy, E., Sanchez, F. J., Munoz, E., Sanz-Hervas, A., Villar, C., and Aguilar, M., J. Appl. Phys. 82, 4681(1997).Google Scholar