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Agglomeration Of Cu Electroplating Seed Layers On Ultra-Thin Ta, Ta1-xNx, Tal-xOx, Contaminated Ta, and Composite Ta/Ta1-xNx Diffusion Barriers

Published online by Cambridge University Press:  10 February 2011

J. W. Hartman ,
Helen Yeh ,
H. A. Atwater  and
Imran Hashim
J. W. Hartman
Affiliation:
Applied Physics, California Institute of Technology, Pasadena California 91125.
Helen Yeh
Affiliation:
Applied Physics, California Institute of Technology, Pasadena California 91125.
H. A. Atwater
Affiliation:
Applied Physics, California Institute of Technology, Pasadena California 91125.
Imran Hashim
Affiliation:
Metal Deposition Product Business Group, Applied Material Corporation, Santa Clara California, 95052.
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Abstract

The agglomeration of thin (10 nm) Cu films suitable for use as electroplating seed layers has been investigated on ultrathin (<4 nm) Ta, Ta1-xNx, Tal-xOx, and composite Ta/Ta1-xNx, diffusion barriers. Copper films on clean 3.6nm Ta barriers deposited by ultrahigh vacuum sputter deposition at up to 120°C are stable against agglomeration during 30 minute anneals at 360°C and display strong (022) crystallographic texture. Similar Cu films deposited on thinner Ta, Ta0 85N0 15, Ta0.95O0 05, and residual gas contaminated (∼ 1 Langmuir) Ta barriers agglomerate during annealing, and Cu films on Ta0 85N0 15 and contaminated Ta have random biaxial crystallographic texture. The density of agglomerated regions in Cu films on SiO2 and Ta0 85N0 15 is characterized as a function of thickness of an ultrathin Ta adhesion layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 257
Copyright
Copyright © Materials Research Society 1999

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References

1. Murarka, S.P. and Hymes, S.W., Crit. Rev. in Solid State and Mat. Sci 20, (2) p87–124 (1995).10.1080/10408439508243732Google Scholar
2. Tao, J., Cheung, N.W. and Hu, C., IEEE Electron. Dev. Lett. 14, 249 (1993).10.1109/55.215183Google Scholar
3. Chin, B., Ding, P.J., Sun, B.X., Chiang, T., Angelo, D., Hashim, I., Xu, Z., Edelstein, S., Chen, F.S., Solid State Tech. 41, (7) p141 (1998).Google Scholar
4. Lin, X.W., D, D. Pramanik, Solid State Tech. 41, (10) p63 (1998).Google Scholar
5. Jiran, E. and Thompson, C.V., Thin Solid Films, 208, p23–28 (1992).Google Scholar
6. Rha, J.J. and Park, J.K., J. Appl. Phys. 82 (6), p2933–2936 (1997).Google Scholar
7. Thompson, C.V., J. Appl. Phys. 58 (2), p763–772 (1985).Google Scholar
8. Zielinski, E.M., Vinci, R.P., and Bravman, J.C., J. Elec. Mat., 24 (10) p1485–1492 (1995).Google Scholar
Zielinski, E.M., Vinci, R.P., and Bravman, J.C., J. Appl. Phys. 76 (8), p4516–4523 (1994).Google Scholar