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AFM investigations of chemical-mechanical processes on silicon(100) surfaces

Published online by Cambridge University Press:  01 February 2011

Ruiji Iomoto
Affiliation:
jtd@wsu.edu, Washington State University, Pullman WA 99164, United States
Forrest Stevens
Affiliation:
stevensf@pullman.com, Washington State University, Pullman, WA, 99164, United States
Steven Langford
Affiliation:
langford@wsu.edu, Washington State University, Pullman, WA, 99164, United States
Tom Dickinson
Affiliation:
jtd@wsu.edu, Washington State University, Washington State University, 28 14 Physical Sciences, Pullman, WA, 99164-2814, United States
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Abstract

Atomic force microscopy (AFM) was used to examine chemical-mechanical processes on Si (100) surfaces. Places where the underlying silicon was exposed etched in basic solution, producing structures 100 nm or less in size. Etching occurs only in the presence of combined mechanical and chemical effects. By performing AFM in basic solution, the entire etching process could be observed directly. High-force scans were used to remove oxide and initiate etching in selected locations, followed by low-force scans which imaged the etching process. Although roughness initially increased during etching, the final surfaces were smooth. The etching was measured for different applied loads, numbers of scans, concentrations of the etching solution, and time. The oxide layer was extremely sensitive to applied stress, and even very light scanning caused the oxide layer to dissolve more rapidly. Once the oxide layer was removed, chemical etching proceeded with or without AFM scanning, but if AFM scanning was continued additional material was removed, probably by a tribochemical mechanism on pure Si.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1 Maw, W., Stevens, F., Langford, S. C., and Dickinson, J. T., ”Single asperity tribochemical wear of silicon nitride studied by atomic force microscopy,” J. Appl. Phys. 92, 51035109(2002).Google Scholar
2 Stevens, F., Langford, S. C., and Dickinson, J. T., ”Tribochemical wear of sodium trisilicate glass at the nanometer size scale,” J. Appl. Phys. 99, 023529 (2006).Google Scholar
3 Katsuki, F., Saguchi, A., Takahashi, W., and Watanabe, J., ”The atomic-scale removal mechanism during Si tip scratching on Si and SiO2 surfaces in aqueous KOH with an atomic force microscope,” Jpn. J. Appl. Phys. Part 1 41, 49194923 (2002).Google Scholar
4 Moon, W. C., Yoshinobu, T., and Iwasaki, H., ”Nanotribology of Si oxide layers on Si by atomic force microsocopy,” Ultramicroscopy 86, 4953 (2001).Google Scholar
5 Palik, E. D., Bermudez, V. M., and Glembocki, O. J., ”Ellipsometric study of orientation-dependent etching of silicon in aqueous KOH,” J. Electrochem. Soc. 132, 871884(1985).Google Scholar
6 Seidel, H., Csepregi, L., Heuberger, A., and Baumgärtel, H., ”Anisotropic etching of crystalline silicon in alkaline solutions,” J. Electrochem. Soc. 137, 36123626 (1990).Google Scholar
7 Palik, E. D., Gray, H. G., and Klein, P. B., ”A Raman study of etching silicon in aqueous KOH,” J. Electrochem. Soc. 130, 956959 (1983).Google Scholar
8 Morita, M., Ohmi, T., Hasegawa, E., Kawakami, M., and Ohwada, M., ”Growth of native oxide on a silicon surface,” J. Appl. Phys. 68, 12721281 (1990).Google Scholar
9 Sakaino, K., Kawabata, Y., and Adachi, S., ”Etching characteristics of Si(100) surfaces in an aqueous NaOH solution,” J. Electrochem. Soc. 147, 15301534 (2000).Google Scholar
10 Sakaino, K. and Adachi, S., ”Study of Si(100) surfaces etched in TMAH solution,” Sensors and Actuators A 88, 7178 (2001).Google Scholar
11 Palik, E. D., Glembocki, O. J., Heard, I. J., Burno, P. S., and Tenerz, L., ”Etching roughness for (100) silicon surfaces in aqueous KOH,” J. Appl. Phys. 70, 32913300 (1991).Google Scholar