Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-06-19T09:08:33.844Z Has data issue: false hasContentIssue false
  • English
  • Français

Activation of the Si(100)/Cl2 Etching Reaction at High Cl2 Translational Energies

Published online by Cambridge University Press:  25 February 2011

Francis X. Campos ,
Gabriela C. Weaver ,
Curtis J. Waltman  and
Stephen R. Leone
Francis X. Campos
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, and Department of Chemistry, University of Colorado, Boulder, Colorado,80309-0440
Gabriela C. Weaver
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, and Department of Chemistry, University of Colorado, Boulder, Colorado,80309-0440
Curtis J. Waltman
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, and Department of Chemistry, University of Colorado, Boulder, Colorado,80309-0440
Stephen R. Leone
Affiliation:
Staff member, Quantum Physics Division, National Institute of Standards and Technology.
Get access

Abstract

Exposing a Si(100) surface to a pulsed beam of neutral Cl2 with high translational energy results in etching at a rate faster than that seen with chlorine at thermal energies. The Cl2 beam used in these experiments is produced by laser vaporization of cryogenic films. It has a broad energy distribution which can be varied by changing laser energy and film thickness. Beams with mean energies as low as 0.4 eV result in etching =10 times faster than etching by thermal Cl2. When Cl2 beams are used which have considerable flux above 3 eV, the etching rate increases by a further factor of 3.6 ± 0.6. This rate increase, which occurs at energies just above the Si-Si bond energy, suggests that kinetic energy can be efficiently utilized to break surface bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 177
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lin, Y-L., Zheng, Q-K., Jin, Z-K., Yu, M., Wu, Z-K. and Qin, Q-Z., J. Phys. Chem. 93, 5531 (1989).Google Scholar
2. Bailer, T., Oostra, D. J., Vries, A. E. de and Veen, G. N. A. van, J. Appl. Phys. 60, 2321 (1986).CrossRefGoogle Scholar
3. Okano, H., Horiike, Y. and Sekine, M., Jap. J. Appl. Phys. 24, 68 (1985).CrossRefGoogle Scholar
4. Kullmer, R. and Bauerle, D., Appl. Phys. A 47, 377 (1988).CrossRefGoogle Scholar
5. Chuang, M-C and Coburn, J. W., J. Vac. Sci. Tech. A 8, 1969 (1990).CrossRefGoogle Scholar
6. Oostra, D. J., Haring, A., Ingen, R. P. van and Vries, A. E. de, J. Appl. Phys. 64, 315 (1988).CrossRefGoogle Scholar
7. Kolfschoten, A. W., Nucl. Inst. Meth. B19/20, 1001 (1987).CrossRefGoogle Scholar
8. Rossen, R. and Swain, H., J. Vac. Sci. Tech. A 5, 1595 (1987).CrossRefGoogle Scholar
9. Coburn, J. W. and Harold Winters, F., J. Appl. Phys. 50 3189 (1979)CrossRefGoogle Scholar
10. Mizutani, T., Dale, C. J., Chu, W. K. and Mayer, T. M., Nuc. Inst. Meth. B7/8, 825 (1985).CrossRefGoogle Scholar
11. Manenschijn, A., Drift, E. van der, Janssen, G. C. A. M., and Radelaar, S., J. Appl. Phys. 69, 7996 (1991).CrossRefGoogle Scholar
12. Suzuki, K., Hiraoka, S., and Nishimatsu, S., J. Appl. Phys. 64, 3697 (1988).CrossRefGoogle Scholar
13. Cousins, L. M and Leone, S. R., J. Mater. Res. 3, 1158 (1988).CrossRefGoogle Scholar
14. Cousins, L. M., Levis, R. J. and Leone, S. R., J. Chem. Phys. 91, 5731 (1989).CrossRefGoogle Scholar
15. Hoek, P. J. van den, Ravenek, w., and Baerends, E. J., Phys. Rev. B. 38, 12508 (1988).CrossRefGoogle Scholar
16. The Wiley/NBS Registry of Mass Spectral Data, McLafferty, F. W. and Stauffer, D. B., eds., John Wiley and Sons, New York, 1989 Google Scholar