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Zone Refining Of Nonsubstitutional Impurities During Pulsed Laser Annealing*

Published online by Cambridge University Press:  15 February 2011

C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
H. Naramoto
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. M. Williams
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
S. R. Wilson
Affiliation:
Motorola, Inc., Phoenix, Arizona
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Abstract

A large number of impurities which do not form covalent bonds with silicon cannot be incorporated into the lattice at measurable (by RBS) concentrations by pulsed laser annealing. At low concentrations the impurities can be zone refined to the surface, while at high concentrations the interface becomes unstable during regrowth leading to a cell structure. For each impurity there is a critical concentration required for interfacial instability to develop. The results are in qualitative agreement with a simple model for solute trapping and zone refining which assumes that the impurity diffusivity in the interfacial region is intermediate between that of the liquid and the solid.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

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Footnotes

+

Guest scientist from Japan Atomic Energy Research Institute, Tokai-mura, Japan.

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W–7405–eng–26 with Union Carbide Corporation.

References

1. Laser-Solid Interactions and Laser Processing–1978, ed. by Ferris, S. D., Leamy, H.J. and Poate, J. M., American Institute of Physics, New York, 1979.Google Scholar
2. Laser and Electron Beam Processing of Materials, ed. by White, C. W. and Peercy, P.S., Academic Press, New York, 1980.Google Scholar
3. Laser and Electron-Beam Solid Interactions and Materials Processing, ed. by Gibbons, J. F., Hess, L. D. and Sigmon, T. W., North Holland, New York, 1981.Google Scholar
4. White, C. W., Wilson, S. R., Appleton, B. R. and Young, F. W. Jr., J. Appl. Phys. 51, 738 (1980).CrossRefGoogle Scholar
5. Baeri, P., Campisano, S. U., Foti, G. and Rimini, E., Phys. Rev. Lett. 41, 1246 (1978).CrossRefGoogle Scholar
6. White, C. W., Narayan, J., Appleton, B. R. and Wilson, S. R., J. Appl. Phys. 50, 2967 (1979).CrossRefGoogle Scholar
7. White, C. W., Wilson, S. R., Appleton, B. R. and Narayan, J., Ref. 2, p. 124.Google Scholar
8. Narayan, J., these proceedings.Google Scholar
9. Narayan, J., Naramoto, H. and White, C. W., J. Appl. Phys., in press. Google Scholar
10. Campisano, S. U., Foti, G., Baeri, P., Grimaldi, M. G. and Rimini, E., Appl. Phys. Lett. 37, 719 (1980).CrossRefGoogle Scholar
11. Milnes, A. G., p. 29 in Deep Impurities in Semiconductors, John Wiley and Sons, New York, 1973.Google Scholar

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