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Zn-Based Buffer Layer and High-Quality CIGS Films Grown by a Novel Method

Published online by Cambridge University Press:  01 February 2011

Akira Yamada
Affiliation:
yamada@pe.titech.ac.jp, Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, 2-12-1-S9-10, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan, +81-3-5734-2698, +81-3-5734-2897
Fanying Meng
Affiliation:
meng.f.aa@m.titech.ac.jp, Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, 2-12-1-S9-10, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Yoshiyuki Chiba
Affiliation:
chiba.y.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Masahiro Kawamura
Affiliation:
kawamura.m.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Makoto Konagai
Affiliation:
konagai.m.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
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Abstract

ZnMgO was fabricated by MOCVD and the films were applied to a buffer layer of Cu(InGa)Se2 solar cells.

A nove growth method for Cu(InGa)Se2 was described in which cracked Se was utilized.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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Zn-Based Buffer Layer and High-Quality CIGS Films Grown by a Novel Method
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