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Zirconium Mediated Hydrogen Outdiffusion from p-GaN

Published online by Cambridge University Press:  03 September 2012

E. Kaminska
Affiliation:
Institute of Electron Technology, Al.Lotnikow 46, Warsaw, Poland, eliana@ite.waw.pl.
A. Piotrowska
Affiliation:
Institute of Electron Technology, Al.Lotnikow 46, Warsaw, Poland, eliana@ite.waw.pl.
A. Barcz
Affiliation:
Institute of Electron Technology, Al.Lotnikow 46, Warsaw, Poland, eliana@ite.waw.pl. Institute of Physics PAS, Warsaw, Poland
J. Jasinski
Affiliation:
Institute of Experimental Physics, Warsaw University, Warsaw, Poland
M. Zielinski
Affiliation:
Institute of Physics PAS, Warsaw, Poland
K. Golaszewska
Affiliation:
Institute of Electron Technology, Al.Lotnikow 46, Warsaw, Poland, eliana@ite.waw.pl.
R.F. Davis
Affiliation:
Department of Material Science and Eng., NCSU, Raleigh, NC 27695-7907, USA
E. Goldys
Affiliation:
SMPCE, Macquarie University, Sydney NSW, Australia
K. Tomsia
Affiliation:
SMPCE, Macquarie University, Sydney NSW, Australia
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Abstract

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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