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XRD Texture and Morphology Analysis of Polycrystalline LPCVD Germanium-Silicon

Published online by Cambridge University Press:  15 February 2011

Cora Salm
Affiliation:
MESA Research Institute, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
Jos G.E. Klappe
Affiliation:
MESA Research Institute, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
Jisk Holleman
Affiliation:
MESA Research Institute, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
Jan Bart Rem
Affiliation:
MESA Research Institute, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
Pierre H. Woerlee
Affiliation:
MESA Research Institute, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
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Abstract

The morphology and texture of polycrystalline LPCVD GexSi1-x alloys have been studied for various deposition temperatures and for x = 0, x = 1 and x ≈ 0.3. The transition temperature of amorphous to polycrystalline growth is much lower for Ge and GexSi1-x than for Si. Just above this transition temperature, we observed a (220) orientation for all polycrystaline layers grown. At elevated temperatures a change to the (004) orientation for poly-GexSi1-x and (331) for poly-Si and poly-Ge is noted.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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