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X-ray Analysis of Si/Ge/Si(001) Heterolayer Structures Grown by Surfactant Mediated Epitaxy.

Published online by Cambridge University Press:  17 March 2011

Brad P. Tinkham ,
Duane M. Goodner ,
Donald A. Walko  and
Michael J. Bedzyk
Brad P. Tinkham
Affiliation:
Northwestern University, Department of Materials Science and Engineering, and Materials Research Center. 2225 N. Campus Dr. Evanston, IL 60208
Duane M. Goodner
Affiliation:
Northwestern University, Department of Materials Science and Engineering, and Materials Research Center. 2225 N. Campus Dr. Evanston, IL 60208
Donald A. Walko
Affiliation:
Northwestern University, Department of Materials Science and Engineering, and Materials Research Center. 2225 N. Campus Dr. Evanston, IL 60208
Michael J. Bedzyk
Affiliation:
Northwestern University, Department of Materials Science and Engineering, and Materials Research Center. 2225 N. Campus Dr. Evanston, IL 60208
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Abstract

X-ray diffraction and x-ray standing waves (XSW) have been used to investigate the quality of epitaxial ultra-thin Ge films grown on Si(001) with and without Te as a surfactant. The efficacy of Te as a surfactant in this application has been debated. We measured samples between 1 and 10 ML in thickness and our results clearly indicate that Ge films grown with Te are superior to those grown without Te. The coherent positions and coherent fract ons determined from XSW analysis agree well with those predicted by linear elasticity theory for Ge/Si(001). Furthermore, grazing incidence diffraction measurements (GIXD) suggests that 9 ML Ge grown on Si(001) with Te is strained in-plane while the same film grown without Te is relaxed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N4.9
Copyright
Copyright © Materials Research Society 2002

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