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X-ray Amorphous P-type Conductive Oxide; ZnRh2O4

Published online by Cambridge University Press:  11 February 2011

Satoru Narushima
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN
Hiroshi Mizoguchi
Affiliation:
Transparent ElectroActive Materials, Exploratory Research for Advanced Technology, Japan, Science and Technology Corporation, KSP C-1232, 3–2–1 Sakado, Takatsu-ku, Kawasaki, 213–0012, JAPAN
Hiromichi Ohta
Affiliation:
Transparent ElectroActive Materials, Exploratory Research for Advanced Technology, Japan, Science and Technology Corporation, KSP C-1232, 3–2–1 Sakado, Takatsu-ku, Kawasaki, 213–0012, JAPAN
Masahiro Hirano
Affiliation:
Transparent ElectroActive Materials, Exploratory Research for Advanced Technology, Japan, Science and Technology Corporation, KSP C-1232, 3–2–1 Sakado, Takatsu-ku, Kawasaki, 213–0012, JAPAN
Ken-ichi Shimizu
Affiliation:
Keio University, Hiyoshi, Yokohama 233–0061, Japan
Kazushige Ueda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN
Toshio Kamiya
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN
Hideo Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN Transparent ElectroActive Materials, Exploratory Research for Advanced Technology, Japan, Science and Technology Corporation, KSP C-1232, 3–2–1 Sakado, Takatsu-ku, Kawasaki, 213–0012, JAPAN
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Abstract

An amorphous p-type conductive oxide semiconductor was created based on a mother crystalline material, a p-type conductive ZnRh2O4 spinel. The amorphous film of ZnRh2O4 was deposited by an rf sputtering method. Seebeck coefficient was positive, +78 μVK-1, indicating that major carrier is a positive hole. A moderate electrical conductivity (2 S cm-1 at room temperature) for a p-type semiconductor was observed. Optical band gap was estimated to be 2.1 eV. P-n junction diodes with a structure of Au / a-ZnRh2O4 / a-InGaZnO4 / ITO fabricated on glass substrates, operated with a good rectifying characteristics, a rectification current ratio at ± 5V of ∼103. The threshold voltage was 2.1 eV, which corresponds to the band gap energy of the amorphous ZnRh2O4. This is the first discovery of a p-type amorphous oxide and the demonstration of p-n junction all composed of amorphous oxide semiconductors.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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