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W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

Published online by Cambridge University Press:  21 February 2011

M. Mamor
Affiliation:
Institut d’Electronique Fondamentale, CNRS URA 22, Bat. 220, Université Paris Sud, 91405 Orsay Cedex, France,
E. Finkman
Affiliation:
Permanent address : Electronic Engineering Department, Technion, 32000 Haïfa, Israel.
F. Meyer
Affiliation:
Institut d’Electronique Fondamentale, CNRS URA 22, Bat. 220, Université Paris Sud, 91405 Orsay Cedex, France,
K. Bouziane
Affiliation:
CNRS Bellevue, 92195 Meudon, France.
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Abstract

The Schottky barrier heights (ΦB) for W/Si Schottky diodes have been determined from IV measurements. The effects of the sputter deposition conditions of the W-films were studied. X-ray diffraction was used to examine the structure and the lattice parameters of the W-films while the stress was determined by using a profilometer from the measurement of the curvature of the substrate after metallization. The resistivity is determined by using a four-point probe. A compressive-to-tensile stress transition is associated with the transformation of the ±—W-phase into the (β—W-phase as the working gas pressure is increased. These effects, which are frequently observed, coïncide with a significant increase of the W-film resistivity and a change (△ΦB≈50 meV) in the Schottky barrier height on n-type. On the other hand, the barrier height on the p-type remains constant under all the experimental conditions investigated. These results are discussed in terms of effects of strain and structure of W-films on the work function of the W, as well as in terms of modification of the pinning position of the Fermi level or else change in the value of the Richardson constant.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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