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Wide Band Gap a-Si:H Based Ihgh Gain Vidicon Devices Prepared by Chemical Anniealing

Published online by Cambridge University Press:  10 February 2011

W. Futako
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 227, JAPAN, futako@echem.titech.ac.jp
T. Sugawara
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 227, JAPAN
T. Kamiya
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 227, JAPAN
C.M. Fortmann
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 227, JAPAN
I. Shimizu
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 227, JAPAN
Corresponding
E-mail address:
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Abstract

Previously it was shown that high quality wide gap hydrogenated amorphous silicon material could be prepared by a layer-by-layer technique involving hydrogen chemical annealing. Using this wide gap material, high electric field, n-i-p diode devices were fabricated. Reverse bias dark current was suppressed by optimization of the n-layer doping level (250ppm) and the thickness (2000Å). Working vidicon type device were prepared, tested, and optimized by further reduction in the high reverse bias leakage current. Vidicon devices showed very promising performance; however, at the present stage of development some point defects were observable at the highest reverse bias voltages probed (∼-6×105 V/cm).

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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