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The Way to Producing of the Perfect Sapphire Crystals

Published online by Cambridge University Press:  15 February 2011

Vladimir Flerov ,
Alexei Flerov  and
Michael Musatov
Vladimir Flerov
Affiliation:
Institute of Physics, Salaspils-1, LV-2169 Latvia
Alexei Flerov
Affiliation:
Institute of Physics, Salaspils-1, LV-2169 Latvia
Michael Musatov
Affiliation:
NITIOM, 36 Babushkina St., 193171 Sankt-Petersburg, Russia
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Abstract

It is elaborated the crystal growth technique on base of Cyropulos method that allows to receive the sapphire single crystals of high quality with small dislocation density, low levels of X-ray luminescence and thermoluminescence, high transparency, and high radiation resistance. The main features of developed technique are: low temperature gradient in growth zone, acute-angled crystallization front, and absence of any mechanical displacement during growing process.

Some other growing factors influencing on crystal quality are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 329: Symposium R – New Materials for Advanced Solid State Lasers , 1993 , 51
Copyright
Copyright © Materials Research Society 1994

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References

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