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Visible Photoluminescence From Si Ion-Implanted and Thermally Annealed SiO2 Films

Published online by Cambridge University Press:  15 February 2011

Y. Kanemitsu
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
N. Shimizu
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
S. Okamoto
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
T. Komoda
Affiliation:
UK R&D Laboratory, Matsushita Electric Works Ltd., Guildford, Surrey, GU2 5YG, UK
P. L. F. Hemment
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
B. J. Sealy
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
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Abstract

We have experimentally studied the photoluminescence (PL) properties of Si clusters in SiO2 glassy matrices. Si clusters in the SiO2 matrices were fabricated by Si+ ion implantation into SiO2 glasses and then thermally annealed in forming gas. Broad PL peaks are observed in the visible spectral region at room temperature. Resonantly excited PL spectra indicate that the strong coupling of excitons and stretching vibrations of the Si-0 bonds causes the broad luminescent spectra. It is concluded that the interaction between electronic and vibrational excitations controls the luminescent emission and the observed dynamics.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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Visible Photoluminescence From Si Ion-Implanted and Thermally Annealed SiO2 Films
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