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Viscoelastic Stress Relief in Patterned Silicon-on-Insulator Structures

Published online by Cambridge University Press:  22 February 2011

Theodore J. Letavic
Affiliation:
Department of Electrical, Computer and Systems Engineering and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180.
Edward W. Maby
Affiliation:
Department of Electrical, Computer and Systems Engineering and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180.
Ronald J. Gutmann
Affiliation:
Department of Electrical, Computer and Systems Engineering and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180.
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Abstract

A high-temperature viscoelastic stress relief technique has been investigated as a means for reducing in-plane stress encountered during zone-melt recrystallization of patterned silicon-on-insulator structures. This technique incorporates a phosphosilicate glass layer between the silicon film and the insulating substrate to provide a viscous flow mechanism for stress relief within the composite structure. The stress relaxation can bequalitatively described by a mechanical model which couples thermal expansion and viscoelastic flow. The model predicts the time constant for stress relief at high temperatures as a function of pattern size, and the results are useful as a design aid for zone-melt recrystallization experiments.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

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