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Vertically Aligned Carbon Nanotubes Growth Using Self-assembled Ni Nanoparticles Produced by Ion Implantation

Published online by Cambridge University Press:  01 February 2011

D. L. Baptista
Affiliation:
dbaptista@gmail.com, UFRGS, Instituto de Física, Av. Bento Gonalves, 9500, Porto Alegre, 91501-970, Brazil
J. M. J. Lopes
Affiliation:
j.m.lopes@fz-juelich.de, UFRGS, Instituto de Física, Porto Alegre, 91501-970, Brazil
M. J. Morschbacher
Affiliation:
marcio.morschbacher@ufrgs.br, UFRGS, Instituto de Física, Porto Alegre, 91501-970, Brazil
S. H. Dalal
Affiliation:
shd21@cam.ac.uk, University of Cambridge, Engineering Department, Cambridge, CB3 0FA, United Kingdom
S. P. Oei
Affiliation:
spo25@cam.ac.uk, University of Cambridge, Engineering Department, Cambridge, CB3 0FA, United Kingdom
K. B. K. Teo
Affiliation:
kbkt2@cam.ac.uk, University of Cambridge, Engineering Department, Cambridge, CB3 0FA, United Kingdom
W. I. Milne
Affiliation:
wim1@hermes.cam.ac.uk, University of Cambridge, Engineering Department, Cambridge, CB3 0FA, United Kingdom
F. C. Zawislak
Affiliation:
zawislak@if.ufrgs.br, UFRGS, Instituto de Física, Porto Alegre, 91501-970, Brazil
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Abstract

An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×1015 and 1.7×1016 ions cm−2 and post-annealing treatment at 700, 900 and 1100 °C. After exposed to the surface by HF dip etching, the Ni nanoparticles are used as catalyst for the growth of vertically aligned carbon nanotubes by direct current plasma enhanced chemical vapor deposition.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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Vertically Aligned Carbon Nanotubes Growth Using Self-assembled Ni Nanoparticles Produced by Ion Implantation
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