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Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

J. Su
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
M. Gherasimova
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
G. Cui
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
J. Han
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
S. Lim
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
D. Ciuparu
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
L. Pfefferle
Affiliation:
Faculty of Engineering and Applied Science, Yale University, New Haven, CT 06520
Y. He
Affiliation:
Division of Engineering, Brown University, Providence, RI 02192
A. V. Nurmikko
Affiliation:
Division of Engineering, Brown University, Providence, RI 02192
C. Broadbridge
Affiliation:
Physics Department, Southern Connecticut State University, New Haven, CT 06515
A. Lehman
Affiliation:
Facility for Electron Microscopy, Trinity College, Hartford, CT 06106
T. Onuma
Affiliation:
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, and 21-COE, University of Tsukuba, 1–1–1 Tennodai, Tsukuba 305–8573, Japan
M. Kurimoto
Affiliation:
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, and 21-COE, University of Tsukuba, 1–1–1 Tennodai, Tsukuba 305–8573, Japan NICP, ERATO, Japan Science and Technology Agency, 4–1–8 Honcho, Kawaguchi 332–0012, Japan
S. F. Chichibu
Affiliation:
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, and 21-COE, University of Tsukuba, 1–1–1 Tennodai, Tsukuba 305–8573, Japan NICP, ERATO, Japan Science and Technology Agency, 4–1–8 Honcho, Kawaguchi 332–0012, Japan
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Abstract

We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition
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Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition
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