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Valencies of Mn impurities in ZnO
Published online by Cambridge University Press: 15 March 2011
We use the self-interaction corrected (SIC) local spin-density (LSD) approximation to investigate the groundstate valency configuration of Mn impurities in p-type ZnO. In Zn1−xMnxO, we find the localized Mn2+ configuration to be preferred energetically. When codoping Zn1−xMnxO with N, we find that four d-states stay localized at the Mn site, while the remaining d-electron charge transfers into the hole states at the top of the valence bands. If the Mn concentration [Mn] is equal to the N concentration [N], this results in a scenario without carriers to mediate long range order. If on the other hand [N] is larger than [Mn], the N impurity band is not entirely filled, and carrier mediated ferromagnetism becomes theoretically possible.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 825: Symposium G – Semiconductor Spintronics , 2004 , G2.9
- Copyright © Materials Research Society 2004