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Vacancy Related Defects in Thin Film Pb(ZrTi)O3 Materials

Published online by Cambridge University Press:  15 February 2011

A. Krishnan
Affiliation:
Michigan Technological University, Department of Physics, Houghton, MI 49931
D.J. Keeble
Affiliation:
Michigan Technological University, Department of Physics, Houghton, MI 49931
R. Ramesh
Affiliation:
Bell Communications, Red Bank, NJ07768
W.L. Warren
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349
B.A. Tuttle
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1349
R.L. Pfeffer
Affiliation:
United States Army Research Laboratories, Fort Monmouth, NJ 07703
B. Nielsen
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973
K.G. Lynn
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973
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Abstract

Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(Zr,Ti)O3 (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO2 electrodes, or by laser ablation with La0.5Sr0.5CoO3 electrodes. The RuO2 and La0.5Sr0.5CoO3 electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La0.5Sr0.5CoO3 layers was observed indicating an increase in neutral or negatively charged open-volume defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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