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Ultrasonic spray assisted Mist-CVD method for high-quality crystalline and amorphous oxide semiconductors growth

Published online by Cambridge University Press:  15 March 2011

Hiroyuki Nishinaka
Affiliation:
Dept. Electronic Science and Engineering, Kyoto University, Katsura, Kyoto, 615-8520, Japan
Yudai Kamada
Affiliation:
Dept. Electronic Science and Engineering, Kyoto University, Katsura, Kyoto, 615-8520, Japan
Keiji Kiba
Affiliation:
Dept. Electronic Science and Engineering, Kyoto University, Katsura, Kyoto, 615-8520, Japan
Naoki Kameyama
Affiliation:
Dept. Electronic Science and Engineering, Kyoto University, Katsura, Kyoto, 615-8520, Japan
Shizuo Fujita
Affiliation:
Dept. Electronic Science and Engineering, Kyoto University, Katsura, Kyoto, 615-8520, Japan
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Abstract

The growth of high-quality crystalline ZnO thin films on ZnO bulk substrates and of amorphous In-Ga-O and Ga-Al-O thin films has been demonstrated by using the solution-based cost-effective and environmental friendly ultrasonic spray assisted mist-CVD method. The homoepitaxial ZnO thin films with atomically flat surfaces were successfully grown on Zn-polar ZnO substrates via a step-flow growth mode, in spite of different miscut angles of the substrate, at the furnace temperature of 1000°C. The compositions and optical absorption edges of the amorphous In-Ga-O and Ga-Al-O thin films were controlled by means of the concentration ratios of [In]/([In]+[Ga]) and [Al]/([Al]+[Ga]) in the starting solutions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

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Ultrasonic spray assisted Mist-CVD method for high-quality crystalline and amorphous oxide semiconductors growth
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