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Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

Published online by Cambridge University Press:  15 February 2011

Sang-Myeon Han
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Min-Cheol Lee
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Su-Hyuk Kang
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Moon-Young Shin
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: mkh@snu.ac.kr
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Abstract

An ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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