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Ultra Shallow Incorporation of Nitrogen into Gate Dielectrics by Pulse Time Modulated Plasma

Published online by Cambridge University Press:  01 February 2011

Seiichi Fukuda
Affiliation:
Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 4–14–1 Asahi-cho, Atsugi-shi, Kanagawa, 240–0014, Japan
Yoshimune Suzuki
Affiliation:
Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 4–14–1 Asahi-cho, Atsugi-shi, Kanagawa, 240–0014, Japan
Tomoyuki Hirano
Affiliation:
Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 4–14–1 Asahi-cho, Atsugi-shi, Kanagawa, 240–0014, Japan
Takayoshi Kato
Affiliation:
Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 4–14–1 Asahi-cho, Atsugi-shi, Kanagawa, 240–0014, Japan
Akihide Kashiwagi
Affiliation:
Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 4–14–1 Asahi-cho, Atsugi-shi, Kanagawa, 240–0014, Japan
Masaki Saito
Affiliation:
Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 4–14–1 Asahi-cho, Atsugi-shi, Kanagawa, 240–0014, Japan
Shingo Kadomura
Affiliation:
Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 4–14–1 Asahi-cho, Atsugi-shi, Kanagawa, 240–0014, Japan
Youichi Minemura
Affiliation:
Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, 2–1–1, Katahira Aoba-ku Sendai-shi, Miyagi, 980–8577, Japan
Seiji Samukawa
Affiliation:
Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, 2–1–1, Katahira Aoba-ku Sendai-shi, Miyagi, 980–8577, Japan
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Abstract

In order to obtain a controllability in the nitrogen depth profile in the oxy-nitride gate dielectrics which has been known to have a strong effect on MOS reliability, micro second ordered pulse was used for the inductive coupled plasma source in our pulse time modulated plasma. The radio frequency (RF) of source plasma and pulse frequency were 12.56 MHz and 10 kHz (100 micro second), respectively. Pulse duty ratio was varied from 20 to 100 %. 1.7nm thick thermal silicon dioxide films were subjected to the pulse time modulated plasma and analyzed by SIMS to see the depth profile of nitrogen. A new finding is that both the concentration and the peak position of nitrogen atoms in silicon dioxide films depend on the pulse duty ratio and plasma radiation time. NBTI lifetime was improved with decreased interface state density. We also used this technique to high-k material and investigated process characteristics of nitridation

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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Ultra Shallow Incorporation of Nitrogen into Gate Dielectrics by Pulse Time Modulated Plasma
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