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Ultra Low-k Materials Based on Self-Assembled Organic Polymers

Published online by Cambridge University Press:  29 July 2011

M. Pantouvaki
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium.
L. Zhao
Affiliation:
Intel Assignee at Imec, Kapeldreef 75, B-3001 Leuven, Belgium.
C. Huffman
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium.
K. Vanstreels
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium.
I. Ciofi
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium.
G. Vereecke
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium.
T. Conard
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium.
Y. Ono
Affiliation:
Sumitomo Bakelite Co, Ltd, Yokohama, Kanagawa, 245-0052, Japan.
M. Nakajima
Affiliation:
Sumitomo Bakelite Co, Ltd, Yokohama, Kanagawa, 245-0052, Japan.
K. Nakatani
Affiliation:
Sumitomo Bakelite Co, Ltd, Yokohama, Kanagawa, 245-0052, Japan.
G. P. Beyer
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium.
M. R. Baklanov
Affiliation:
Imec, Kapeldreef 75, B-3001 Leuven, Belgium.
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Abstract

The material properties of two ultra low-k organic polymers are characterized for copper interconnect integration. The k-values are 2.2-2.3 for both. Compared to OSG materials of similar k-values, these polymers have lower porosity and smaller pore size, achieved using selfassembled chemistry. Both materials demonstrate excellent resistance to plasma damage: no water uptake was detected after exposure to selected etching plasmas. This characteristic, combined with the small pore size and low porosity, results in the successful integration of the organic low-ks in 80 nm spacing with no significant increase in the integrated k-values.

It is found that higher open porosity in polymer A is accompanied by higher leakage current, which is not however linked to lower dielectric breakdown lifetimes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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