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A Two-Step Spacer Etch for High-Aspect-Ratio Gate Stack Process
Published online by Cambridge University Press: 14 March 2011
A highly selective nitride etch was developed for gate stack spacer process in advanced memory programs. Based on methyl fluoride chemistry with better than 8:1 selectivity of nitride:oxide, this process exhibits minimal erosion to the underlying RTO thermal oxide for consistent diffusion ion-implant control. As the groundrule changed to 0.175um and below, a two-step etch scheme was employed to maintain the profile control in high-aspect-ratio structures. The stability and repeatability of the process is demonstrated in the SPC chart of the post etch FTA site measurement.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C5.4.1
- Copyright © Materials Research Society 2000