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Two-dimensional Dopant Diffusion Study using Scanning Capacitance Microscopy

Published online by Cambridge University Press:  10 February 2011

Guanyuan M. Yu
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
Peter B. Griffin
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
James D. Plummer
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
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Abstract

The results of a two-dimensional dopant diffusion study using two new sample preparation techniques and a database-driven deconvolution technique are presented. These techniques are applied to real devices to justify complex implantation and diffusion models. It will be shown that the dose loss behavior is not uniform along the silicon/oxide interface from the source/drain region to the channel region. A new non-uniform dose loss model is proposed and used to explain the experimental results.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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