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Twin and Grain Boundary in InP :A Synchrotron Radiation Study

Published online by Cambridge University Press:  10 February 2011

Yujie Han
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, CHINA yjhan@red.semi.ac.cn
Jianhua Jiang
Affiliation:
Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, 100039, Beijing, CHINA
Zhouguang Wang
Affiliation:
Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, 100039, Beijing, CHINA
Xunlang Liu
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, CHINA
Jinghua Jiao
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, CHINA
Yulian Tian
Affiliation:
Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, 100039, Beijing, CHINA
Lanying Lin
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box:912, Beijing, 100083, CHINA
Corresponding
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Abstract

Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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