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Tunneling Conductivity in Thermally Oxidized Porous Silicon

Published online by Cambridge University Press:  10 February 2011

Dmitrii G. Yarkin
Affiliation:
Institute of Rare Metals, B.Tolmachevsky 5, Moscow, 109017, Russia
Leonid A. Balagurov
Affiliation:
Institute of Rare Metals, B.Tolmachevsky 5, Moscow, 109017, Russia
Andrei F. Orlov
Affiliation:
Institute of Rare Metals, B.Tolmachevsky 5, Moscow, 109017, Russia
Igor P. Zvyagin
Affiliation:
Institute of Rare Metals, B.Tolmachevsky 5, Moscow, 109017, Russia
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Abstract

Metal/PS/c-Si structures with porous silicon (PS) layers of 55-75% porosity were fabricated on moderately doped p- and n-type c-Si substrates and were thermally oxidized at 400-960°C. The effect of oxidation on the photoluminescence and the transport of charge carriers in these structures were studied. We demonstrated that trap-filled space charge limited current (SCLC) is the dominant transport mechanism at large forward bias. The analysis of the current – voltage characteristics in the SCLC region allowed us to determine the oxidation dependence of the effective thickness of the trap-rich tissue isthmuses, in which space charge is mostly accumulated. The exponential dependence of the ohmic conductance on the thickness of SiOX tissue is explained by tunneling of carriers through potential barriers formed by the tissue surrounding silicon crystallites.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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Tunneling Conductivity in Thermally Oxidized Porous Silicon
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