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Traps at the SiC/SiO2-Interface

Published online by Cambridge University Press:  21 March 2011

Gerhard Pensl
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany.
Michael Bassler
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany.
Florin Ciobanu
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany.
Valeri Afanas'ev
Affiliation:
Laboratory for Semiconductor Physics, University of Leuven, B-3001 Leuven, Belgium.
Hiroshi Yano
Affiliation:
Department Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan.
Tsunenobu Kimoto
Affiliation:
Department Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan.
Hiroyuki Matsunami
Affiliation:
Department Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan.
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Abstract

The density of interface states Dit at SiC/SiO2 interfaces of different SiC polytypes (4H-, 6H- and 15R-SiC) is monitored and the origin of these states is discussed. The hydrogenation behavior of interface states in the temperature range from 250°C to 1000°C is studied by C-V and G-V investigations. The strong increase of Dit close to the 4H-SiC conduction band is attributed to defects located in the oxide (so-called “Near Interface Traps”).

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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